1 北京理工大学 宇航学院，北京 100081
2 西安现代控制技术研究所，陕西 西安710065
针对全捷联图像导引头隔离度问题，分别推导了由探测器和角速率陀螺之间的刻度尺系数误差及动力学偏差引起的隔离度传递函数；采用系数冻结法及劳斯判据分析了含有隔离度寄生回路的制导系统稳定区域，给出了不同无量纲末导时间下制导系统稳定时刻度尺误差和动力学偏差的取值范围；利用伴随函数法研究了隔离度对制导精度的影响。以上研究结果可以为全捷联制导**制导控制系统参数设计提供参考，对于隔离度正反馈的情况应予以更多关注。
全捷联图像导引头 隔离度寄生回路 制导系统稳定性 制导精度 strapdown imaging seeker DRRPL stability of guidance system guidance accuracy
1 北京理工大学宇航学院，北京 100081
2 西安现代控制技术研究所，陕西 西安 710065
针对全捷联图像导引头无法直接得到惯性系下的视线角速率问题，提出了基于扩展卡尔曼滤波的制导信息估计算法。首先推导了理想条件下视线角速率的解耦公式。进而基于扩展卡尔曼滤波方程，建立了全捷联体制下的制导信息估计模型，结合单兵便携式制导弹药的作战使用模式，通过蒙特卡洛打靶进行了精度仿真分析。最后通过半实物仿真实验对制导系统的闭环可行性进行了验证。结果表明，通过该算法估计得到的制导信息可以满足全捷联制导弹药命中精度的要求，全捷联图像导引头结合制导信息估计算法的技术途径具有较高的工程价值。
全捷联图像导引头 制导信息估计 扩展卡尔曼滤波 单兵便携式制导弹药 strapdown image seeker guidance information estimate extended Kalman filter man-portable guided munitions
Author Affiliations
Abstract
1 College of Information, Guangdong Ocean University, Zhanjiang 524025
2 College of Optics and Electron Information Engineering, University of Shanghai for Science and Technology, Shanghai 200093
Influence of temperature on measurement of surface plasmon resonance (SPR) sensor was investigated. Samples with various concentrations of NaCl were tested at different temperatures. It was shown that if the affection of temperature could be neglected, measurement precision of salt solution was 0.028 wt.-%. But measurement error of salinity caused by temperature was 0.53 wt.-% in average when the temperature drift was 1 Celsius degree. To reduce the error, a double-cell SPR sensor with salt solution and distilled water flowing respectively and at the same temperature was implemented.
130.6010 sensors 120.0120 instrumentation measurement and metrology 230.0230 optical devices Chinese Optics Letters
2006, 4(2): 0291
Author Affiliations
Abstract
1 College of Optics and Electrorics Engineering, University of Shanghai for Science and Technology , Shanghai 200093
2 Department of Physics, Jining Medical College, Jining 272013
3 College of Physics, Qufu Normal University, Qufu 273165
ZnO is an n-type semiconductor having a hexagonal wurtzite structure. By X-ray diffraction (XRD) and scanning electron microscope (SEM), the influences of substrate temperature, the ratio of Ar to O2 and thermal temperature on ZnO crystal quality were studied. The results show that ZnO films deaposited at substrate temperature of 240 Celsius degrees and Ar:O2=1:3 have the best crystallization. UV photoluminescence is observed when ZnO films are excited by He-Cd laser at room temperature. Stress at boundary causes an intrinsic UV emission peak shift to the lower energy. Oxygen vacancy or zinc interstitial causes deep-level emission. With higher substrate temperature, the crystallization is improved and the stress and deep-level green emission are reduced.
300.6190 Spectrometers 250.5230 Photoluminescence 160.6000 Semiconductors, including MQW 310.0310 Thin films 110.7440 X-ray imaging Chinese Optics Letters
2005, 3(0s): 242
1 Shanghai University for Science and Technology, 516,Jungong Road, Shanghai, 200093 China
2 Shanghai Jiaotong University
